K8Q2815UQB-PI4B

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Samsung K8Q2815UQB-PI4B (NOR)

56-pin TSOP1 Standard Type
14mm x 20mm

Samsung K8Q2815UQB-PI4B (NOR) as seen on modern PS3 Slim
productcode meaning:
K - Memory
8 - NOR Flash
Q - Small Classification : Page Mode DDP
28 - Density : 128M, 8M / 16Bank / 8^8
15 - Dual Bank Boot Block (Bank1, Bank2) : 16M, 2M / 14M
U - Vcc : 3.0V / 3.3V (2.7V~3.6V)
Q - Device Type: Top and Bottom Boot Block
B - Generation : 3rd Generation
-
P - Package : TSOP1 (Lead Free)
I - Temp : Industrial
4B - Speed : 60ns/25ns (Page)

NOTE

Multiple Bank architectures (8 banks)
- Bank 0 :  8Mbit (4Kw x 8 and 32Kw x 15)
- Bank 1 : 24Mbit (32Kw x 48)
- Bank 2 : 24Mbit (32Kw x 48)
- Bank 3 :  8Mbit (4Kw x 8 and 32Kw x 15)
- Bank 4 :  8Mbit (4Kw x 8 and 32Kw x 15)
- Bank 5 : 24Mbit (32Kw x 48)
- Bank 6 : 24Mbit (32Kw x 48)
- Bank 7 :  8Mbit (4Kw x 8 and 32Kw x 15)
OTP Block : Extra 256 word
- 128word for factory and 128word for customer OTP (only on first Virtual Chip, A22=low)
Pin Usage Remarks
1 NC No Connection
2 A22 Virtual Chip Enable of 2nd Chip
3 A15
4 A14
5 A13
6 A12
7 A11
8 A10
9 A9
10 A8
11 A19
12 A20
13 WE Write Enable
14 RESET Reset
15 A21
16 WP/ACC Write Protect / Accelerated Program Operation
17 RD/BY Ready/Busy Output
18 A18
19 A17
20 A7
21 A6
22 A5
23 A4
24 A3
25 A2
26 A1
27 NC No Connection
28 NC No Connection
Pin Usage Remarks
29 VCCQ VccQ
30 NC No Connection
31 A0
32 CE Chip Enable
33 VSS Ground
34 OE Output Enable
35 DQ0
36 DQ8
37 DQ1
38 DQ9
39 DQ2
40 DQ10
41 DQ3
42 DQ11
43 Vcc Vcc (min 2.7V-max 3.6V / typ 3.0V)
44 DQ4
45 DQ12
46 DQ5
47 DQ13
48 DQ6 *OTP?
49 DQ14
50 DQ7 *OTP?
51 DQ15
52 VSS Ground
53 NC No Connection
54 A16
55 NC No Connection
56 NC No Connection
  • OTP Block Region : 256-word Flash memory region. The data DQ6=1 for customer locked and DQ7=1 for factory locked