K4G10325FG-HC15: Difference between revisions
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(Created page with "128 MiB GDDR3-RAM used on some 28 nm RSX. {{wikify}}") |
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128 MiB | 128 MiB GDDR5-RAM used on some 28 nm RSX. | ||
{{Samsung memory product code}} | |||
{{wikify}} | {{wikify}} | ||
{{Motherboard Components}}<noinclude>[[Category:Main]]</noinclude> | |||
Latest revision as of 13:17, 29 May 2023
128 MiB GDDR5-RAM used on some 28 nm RSX.
| Manufacturer | DRAM | DRAM type | Density | Organization | Banks | Interface | Revision | Package type | Power & Temp. | Speed |
|---|---|---|---|---|---|---|---|---|---|---|
| K: Samsung | 4: DRAM | J: GDDR3 SDRAM Y: XDR DRAM G: GDDR5 SDRAM |
10: 1G, 8K/32ms 50: 512M, 32K/16ms 52: 512M, 8K/32ms 12: ? |
16: x16bit 32: x32bit |
4: 8 Banks 5: 16 Banks |
U: DRSL, 1.8V, 1.2V Q: SSTL-2 1.8V, 1.8V K: ? T: ? F: POD_15(1.5V,1.5V) |
C: 4th Gen. E: 6th Gen. G: 8th Gen. I: 10th Gen. J: 11th Gen. |
J: BOC (Lead-free) S: ? K: ? H (GDDR5): FBGA-170 |
C: Normal Power (0ºC–95ºC) | B3 (XDR): 3.2Gbps, 35ns, 20Cycles 14 (GDDR3): 1.4ns (700MHz) 15 (GDDR5): 1.5ns (667MHz) |
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