Talk:Hardware flashing

NAND

NAND (256MB, old FAT models, needs 32 wires, 15 per NAND + GND + VCC)
2 chips: Samsung K9F1G08U0A-PIB0

• http://www.uchobby.com/index.php/2007/05/05/read-embedded-flash-chips/

• NAND_Dumper_Extractor.rar (1.55 MB)

NOR

NOR 16MB, newer FAT models + Slims
needs 44 I/O wires: 23 address lines:A0-A22 + 16 Data lines:D0-D15 + 5 control lines: CE#,OE#,WE#,RESET#,TRISTATE (optional:#RY-BY) + GND + VCC
1 chip: Spansion S29GL128N90TFIR2 or Samsung K8Q2815UQB-P14B

• noralizer.rar (9.95 MB) incl. 2 different FAT models (CECHL04-jestero + CECH?-Phiren) pads labeled

• joohan USBbitbanger on AVR for NOR flashing.rar (1.17 MB) (original topic @psx-scene)

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• http://git-hacks.com/atnorflash/atnorflash

• http://hotfile.com/dl/118618929/f6914e0/ps3flasher.tgz.html

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Samsung K9F1G08U0A-PIB0

productcode meaning: K - Memory 9 - NAND Flash

Spansion S29GL128N90TFIR2

productcode meaning:
S29GL128N - 3.0 Volt-only, 512 Megabit (32M x 16-bit/64Mx8-bit), Page-Mode, Flash Memory, 110nm
90 - Speed option : 90ns
T - Package type: TSOP
F - Package materials set : Lead-free
I - Temperature range : Industrial
R2 - ?Vio = 2.7 to 3.6V, lowest address sector protected?

56-pin TSOP1 Standard Type 14mm x 20mm
Spansion S29GLxxxN

Pin	Usage	Remarks
1	A23	No Connection for S29GL128N
2	A22
3	A15
4	A14
5	A13
6	A12
7	A11
8	A10
9	A9
10	A8
11	A19
12	A20
13	WE#	Write Enable
14	RESET#	Reset
15	A21
16	WP#/ACC	Write Protect / Accelerated Program Operation
17	RD/BY#	Ready/Busy Output
18	A18
19	A17
20	A7
21	A6
22	A5
23	A4
24	A3
25	A2
26	A1
27	NC	No Connection
28	NC	No Connection

Pin	Usage	Remarks
29	Vio	Vio - Output Buffer Power
30	NC	No Connection
31	A0
32	CE#	Chip Enable
33	VSS	Ground
34	OE#	Output Enable
35	DQ0
36	DQ8
37	DQ1
38	DQ9
39	DQ2
40	DQ10
41	DQ3
42	DQ11
43	Vcc	Vcc (min 2.7V-max 3.6V / typ 3.0V)
44	DQ4
45	DQ12
46	DQ5
47	DQ13
48	DQ6	*OTP?
49	DQ14
50	DQ7	*OTP?
51	DQ15/A-1
52	VSS	Ground
53	#BYTE	BYTE# Selects 8-bit or 16-bit mode (NC on Samsung NOR)
54	A16
55	NC	No Connection
56	A24	No Connection for S29GL128N and S29GL256N

Samsung K8Q2815UQB-PI4B

productcode meaning:
K - Memory
8 - NOR Flash
Q - Small Classification : Page Mode DDP
28 - Density : 128M, 8M / 16Bank / 8^8
15 - Dual Bank Boot Block (Bank1, Bank2) : 16M, 2M / 14M
U - Vcc : 3.0V / 3.3V (2.7V~3.6V)
Q - Device Type: Yop and Bottom Boot Block
B - Generation : 3rd Generation
-
P - Package : TSOP1 (Lead Free)
I - Temp : Industrial
4B - Speed : 60ns/25ns (Page)

56-pin TSOP1 Standard Type 14mm x 20mm

Pin	Usage	Remarks
1	NC	No Connection
2	A22
3	A15
4	A14
5	A13
6	A12
7	A11
8	A10
9	A9
10	A8
11	A19
12	A20
13	WE	Write Enable
14	RESET	Reset
15	A21
16	WP/ACC	Write Protect / Accelerated Program Operation
17	RD/BY	Ready/Busy Output
18	A18
19	A17
20	A7
21	A6
22	A5
23	A4
24	A3
25	A2
26	A1
27	NC	No Connection
28	NC	No Connection

Pin	Usage	Remarks
29	VCCQ	VccQ
30	NC	No Connection
31	A0
32	CE	Chip Enable
33	VSS	Ground
34	OE	Output Enable
35	DQ0
36	DQ8
37	DQ1
38	DQ9
39	DQ2
40	DQ10
41	DQ3
42	DQ11
43	Vcc	Vcc (min 2.7V-max 3.6V / typ 3.0V)
44	DQ4
45	DQ12
46	DQ5
47	DQ13
48	DQ6	*OTP?
49	DQ14
50	DQ7	*OTP?
51	DQ15
52	VSS	Ground
53	NC	No Connection
54	A16
55	NC	No Connection
56	NC	No Connection

• OTP Block Region : 256-word Flash memory region. The data DQ6=1 for customer locked and DQ7=1 for factory locked