Talk:Hardware flashing: Difference between revisions
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*http://hotfile.com/dl/118618929/f6914e0/ps3flasher.tgz.html | *http://hotfile.com/dl/118618929/f6914e0/ps3flasher.tgz.html | ||
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==Samsung K9F1G08U0A-PIB0== | |||
productcode meaning: | |||
K - Memory | |||
9 - NAND Flash | |||
==Spansion S29GL128N90TFIR2== | |||
==Samsung K8Q2815UQB-PI4B== | |||
<pre>productcode meaning: | |||
K - Memory | |||
8 - NOR Flash | |||
Q - Small Classification : Page Mode DDP | |||
28 - Density : 128M, 8M / 16Bank / 8^8 | |||
15 - Dual Bank Boot Block (Bank1, Bank2) : 16M, 2M / 14M | |||
U - Vcc : 3.0V / 3.3V (2.7V~3.6V) | |||
Q - Device Type: Yop and Bottom Boot Block | |||
B - Generation : 3rd Generation | |||
- | |||
P - Package : TSOP1 (Lead Free) | |||
I - Temp : Industrial | |||
4B - Speed : 60ns/25ns (Page) | |||
</pre> | |||
Revision as of 01:22, 31 May 2011
NAND
NAND (256MB, old FAT models, needs 32 wires, 15 per NAND + GND + VCC)
2 chips: Samsung K9F1G08U0A-PIB0
NOR
NOR 16MB, newer FAT models + Slims
needs 44 I/O wires: 23 address lines:A0-A22 + 16 Data lines:D0-D15 + 5 control lines:
CE#,OE#,WE#,RESET#,TRISTATE (optional:#RY-BY) + GND + VCC
1 chip: Spansion S29GL128N90TFIR2 or Samsung K8Q2815UQB-P14B
- noralizer.rar (9.95 MB) incl. 2 different FAT models (CECHL04-jestero + CECH?-Phiren) pads labeled
Samsung K9F1G08U0A-PIB0
productcode meaning: K - Memory 9 - NAND Flash
Spansion S29GL128N90TFIR2
Samsung K8Q2815UQB-PI4B
productcode meaning: K - Memory 8 - NOR Flash Q - Small Classification : Page Mode DDP 28 - Density : 128M, 8M / 16Bank / 8^8 15 - Dual Bank Boot Block (Bank1, Bank2) : 16M, 2M / 14M U - Vcc : 3.0V / 3.3V (2.7V~3.6V) Q - Device Type: Yop and Bottom Boot Block B - Generation : 3rd Generation - P - Package : TSOP1 (Lead Free) I - Temp : Industrial 4B - Speed : 60ns/25ns (Page)