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| Half Mini PCIe Module || Baseband / RF / PA || Integrated Circuit || Logic || 1 || Qualcomm || MDM6200 || Baseband / RF Transceiver - GSM/WCDMA/HSPA+ || QUALCOMM R, MDM6200, BN38PC, C1134007 || BGA || || | | Half Mini PCIe Module || Baseband / RF / PA || Integrated Circuit || Logic || 1 || Qualcomm || MDM6200 || Baseband / RF Transceiver - GSM/WCDMA/HSPA+ || QUALCOMM R, MDM6200, BN38PC, C1134007 || BGA || || | ||
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| Half Mini PCIe Module || Baseband / RF / PA || Integrated Circuit || Logic || || Qualcomm || MDM6200 || 1x Die 1 - Baseband || Die Marking: HG11-VJ130 || || | | Half Mini PCIe Module || Baseband / RF / PA || Integrated Circuit || Logic || || Qualcomm || MDM6200 || 1x Die 1 - Baseband || Die Marking: HG11-VJ130 || || || | ||
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| Half Mini PCIe Module || Baseband / RF / PA || Integrated Circuit || Logic || || Qualcomm || MDM6200 || 1x Die 2 - RF Transceiver - Dual Mode, GSM/EDGE/EVDOrB/HSPA+, Multi-Band || Die Marking: HG11-VF535-220 || || [[File:MDM6600_HG11-VF535-220_diemrk.jpg|50px]] || | | Half Mini PCIe Module || Baseband / RF / PA || Integrated Circuit || Logic || || Qualcomm || MDM6200 || 1x Die 2 - RF Transceiver - Dual Mode, GSM/EDGE/EVDOrB/HSPA+, Multi-Band || Die Marking: HG11-VF535-220 || || [[File:MDM6600_HG11-VF535-220_diemrk.jpg|50px]] || | ||
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| Half Mini PCIe Module || Memory || Integrated Circuit || Memory || 1 || Toshiba Semiconductor || Y890A111222KA || MCP - 512Mb NAND Flash + 256Mb Mobile SDRAM || Logo CHINA, Y890A111222KA, ZX3581 1135KND || BGA || || | | Half Mini PCIe Module || Memory || Integrated Circuit || Memory || 1 || Toshiba Semiconductor || Y890A111222KA || MCP - 512Mb NAND Flash + 256Mb Mobile SDRAM || Logo CHINA, Y890A111222KA, ZX3581 1135KND || BGA || || | ||
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| Half Mini PCIe Module || Memory || Integrated Circuit || Memory || || Toshiba Semiconductor || Y890A111222KA || 1x Die 1 - Toshiba 512Mb NAND Flash || Die Marking: Toshiba GWM2 || || | | Half Mini PCIe Module || Memory || Integrated Circuit || Memory || || Toshiba Semiconductor || Y890A111222KA || 1x Die 1 - Toshiba 512Mb NAND Flash || Die Marking: Toshiba GWM2 || || || | ||
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| Half Mini PCIe Module || Memory || Integrated Circuit || Memory || || Toshiba Semiconductor || Y890A111222KA || 1x Die 2 - Hynix H55S2562J 256Mb Mobile SDRAM || Die Marking: H55S2562J, DTC05AA | | Half Mini PCIe Module || Memory || Integrated Circuit || Memory || || Toshiba Semiconductor || Y890A111222KA || 1x Die 2 - Hynix H55S2562J 256Mb Mobile SDRAM || Die Marking: H55S2562J, DTC05AA || || || | ||
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| Half Mini PCIe Module || Mechanical / Electro-Mechanical || Module || Other || 1 || Chi Mei Communications Systems || ZOEDA-BB1-S9-17618 || 3G Half Mini PCIe Module - Quad-Band WCDMA/HSUPA/HSDPA, Quad-Band GSM/EDGE || CE0682 AD110301003, 003XYA110299, 003MWA110300, Barcodes, Sony P/N:1-489-770-31, S/N:ZOEDA-BB1-S9-17618, IMEI: 358459044116214, FCC ID: QDJZOE, Made in China Model: ZOE || || [[File:Wireless-card-ZOE-MP-EMI-shields.jpg|50px]] || See [[Wireless_communications]] | | Half Mini PCIe Module || Mechanical / Electro-Mechanical || Module || Other || 1 || Chi Mei Communications Systems || ZOEDA-BB1-S9-17618 || 3G Half Mini PCIe Module - Quad-Band WCDMA/HSUPA/HSDPA, Quad-Band GSM/EDGE || CE0682 AD110301003, 003XYA110299, 003MWA110300, Barcodes, Sony P/N:1-489-770-31, S/N:ZOEDA-BB1-S9-17618, IMEI: 358459044116214, FCC ID: QDJZOE, Made in China Model: ZOE || || [[File:Wireless-card-ZOE-MP-EMI-shields.jpg|50px]] || See [[Wireless_communications]] | ||
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| Main PCB, Top || Processing || Integrated Circuit || Logic || || Sony || CXD5315GG || 1x Die 1 - Toshiba Logic - Core Processor Assumed || Die Marking: T9ML7, Toshiba, LP1X01) || || [[File:CXD5315GG_T9ML7_diemrk1.jpg|50px]] || | | Main PCB, Top || Processing || Integrated Circuit || Logic || || Sony || CXD5315GG || 1x Die 1 - Toshiba Logic - Core Processor Assumed || Die Marking: T9ML7, Toshiba, LP1X01) || || [[File:CXD5315GG_T9ML7_diemrk1.jpg|50px]] || | ||
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| Main PCB, Top || Processing || Integrated Circuit || Logic || || Sony || CXD5315GG || 2x Die 3 - Samsung K4P2G324EC 2Gb Mobile DDR2 || (Die Marking: 200912, M, C, SAMSUNG, K4P2G324EC) || || | | Main PCB, Top || Processing || Integrated Circuit || Logic || || Sony || CXD5315GG || 2x Die 3 - Samsung K4P2G324EC 2Gb Mobile DDR2 || (Die Marking: 200912, M, C, SAMSUNG, K4P2G324EC) || || || | ||
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| Main PCB, Top || I/O & Interface || Passive || Magnetic || 1 || || || Ferrite Bead - Arrayx2 || || 404 || || | | Main PCB, Top || I/O & Interface || Passive || Magnetic || 1 || || || Ferrite Bead - Arrayx2 || || 404 || || |