Talk:RAM: Difference between revisions

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F - Environmental Code : Lead & Halogen Free</pre>
F - Environmental Code : Lead & Halogen Free</pre>


== Graphics Memory ==
== Graphics Memory ==
256MB of GDDR3 memory is located inside the RSX chip using four 64MB Samsung chips.
 
<div style="float:right">[[File:K4J52324QC-SC14.png|200px|thumb|left|FBGA-136 / on-die<br />Samsung K4J52324QC-SC14]]</div><div style="float:right">[[File:RSX bare die.jpg|200px|thumb|left|RSX bare die<br />GPU in centre<br />4x GDDR3]]</div>
 
Datasheet: [http://www.datasheetcatalog.org/datasheets2/12/1276857_1.pdf Samsung K4J52324QC-SC14]
 
<pre>productcode meaning:
K - Samsung Memory
4 - DRAM
J - Product : GDDR3 RAM
52 - Density : 512M, 32ms, 8K
32 - Organisation : x32
4 - Banks : 8
Q - Interface : DRSL(1.8V, 1.2V)
C - Generation : 4th
-
S - Packagetype: BOC lead
C - Temperature & Power: Commercial, Normal Power (1.8V +/- 0.1V)
14 - Speed (Data frequency, tRAC, tRC) : 1.4Gbps
</pre>
 
 
The 256MB of GDDR3 memory is located inside the RSX chip using four 64MB Samsung chips.
 


{| border="1" cellspacing="0" cellpadding="5" border="#999" class="wikitable" style="border:1px solid #999; border-collapse: collapse;"  
{| border="1" cellspacing="0" cellpadding="5" border="#999" class="wikitable" style="border:1px solid #999; border-collapse: collapse;"  
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! Type !! Size !! Speed !! Voltage !! Packaging !! Manufacturer !! Serial Number !! Description
! Type !! Size !! Speed !! Voltage !! Packaging !! Manufacturer !! Serial Number !! Description
|-
|-
| GDDR3 || 64MB || 700MHz || || || Samsung || K4J52324QC-SC14 || 256MB total (4 chips) for PS3 Graphics Memory
| GDDR3 || 64MB || 700MHz || 2.0V +/-0.1V || <strike>FBGA-136</strike> on-die || Samsung || K4J52324QC-SC14 || 256MB total (4 chips) for PS3 Graphics Memory
|-
|-
|}
|}
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:


== PS2 Compatibility Memory ==
== PS2 Compatibility Memory ==
<div style="float:right">[[File:K4R271669F.png|200px|thumb|left|54-ball FBGA<br />Samsung K4R271669F]]</div>
Datasheet: [http://www.samsung.com/global/system/business/semiconductor/product/2007/6/11/XDR_RDRAM/RDRAM/Component/128MbitConsumer/K4R271669H/ds_k4r271669h_rev10.pdf Samsung K4R271669F]
The earlier models with hardware PS2 compatibility also contained an extra 32MB of RDRAM using two 16MB Samsung chips.  
The earlier models with hardware PS2 compatibility also contained an extra 32MB of RDRAM using two 16MB Samsung chips.  


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! Type !! Size !! Speed !! Voltage !! Packaging !! Manufacturer !! Serial Number !! Description
! Type !! Size !! Speed !! Voltage !! Packaging !! Manufacturer !! Serial Number !! Description
|-
|-
| RDRAM || 16MB || 800MHz || || 54-pin || Samsung || K4R271669F || 32MB total (2 chips) for Hardware PS2 Compatibility System Memory
| RDRAM || 16MB || 800MHz || 2.50 +/- 0.13V || 54-pin || Samsung || K4R271669F || 32MB total (2 chips) for Hardware PS2 Compatibility System Memory
|-
|-
|}
|}
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source: http://www.edepot.com/playstation3.html#PS3_Motherboard
source: http://www.edepot.com/playstation3.html#PS3_Motherboard
todo: add datasheet links, more package & pad/pin info, cleanup

Revision as of 12:33, 2 June 2011

Main System Memory

The PS3 has 256MB of 64 bit bus Rambus XDR main system memory. Some models use four 64MB Samsung chips, while other models uses four 64MB Elpida chips.

A sample of the Memory chips in different PS3 models:

Type Size Speed Voltage Packaging Manufacturer Serial Number Description
Rambus XDR 64MB 400MHz 1.8V+/-0.09V FBGA-104 Elpida EDX5116ACSE-3C-E 256MB total (4 chips) for PS3 System Memory (Initial Models)
Rambus XDR 64MB 400MHz 1.8V+/-0.09V FBGA-104 Samsung K4Y50164UC-JCB3 256MB total (4 chips) for PS3 System Memory (Initial Models)
Rambus XDR 64MB 400MHz 1.8V+/-0.09V FBGA-100 Samsung K4Y50164UE-JCB3 256MB total (4 chips) for PS3 System Memory (CECHG,CECHK)
Rambus XDR 64MB 400MHz 1.8V+/-0.09V FBGA-104 Elpida X5116ADSE-3C-E 256MB total (4 chips) for PS3 System Memory (CECH-20xx)
Rambus XDR 128MB 400MHz 1.5V+/-0.075V FBGA-150 Elpida X1032BASE-3C-F 256MB total (2 chips) for PS3 System Memory (CECH-21xx and later)

Elpida EDX5116ACSE-3C-E

104-ball FBGA
Elpida EDX5116ACSE-3C-E

Datasheet: Elpida EDX5116ACSE 

productcode meaning:
E - Elpida Memory
D - Type : Monolithic Device
X - Product Family : XDR RAM
51 - Density : 512M (x16bit)
16 - Organisation : x16bit
A - Supply Voltage : 1.8V, DRSL
C - Die Revision: C
SE - Package : FBGA (with back cover)
-
3C - Speed : 3.2G (tRAC = 35, C Bin)
-
E - Environmental Code : Lead Free


Samsung K4Y50164UC-JCB3

100-ball FBGA
Samsung K4Y50164UC-JCB3

Datasheet: Samsung K4Y50164UC-JCB3 

productcode meaning:
K - Samsung Memory
4 - DRAM
Y - Product : XDR RAM
50 - Density : 512M, 32K/16ms(0,49us)
16 - Organisation : x16
4 - Banks : 8
U - Interface : DRSL(1.8V, 1.2V)
C - Generation : 4th
-
J - Packagetype: BOC lead free
C - Temperature & Power: Commercial, Normal Power
B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles


Samsung K4Y50164UE-JCB3

104-ball FBGA
Samsung K4Y50164UE-JCB3

Datasheet: Samsung K4Y50164UE-JCB3 

productcode meaning:
K - Samsung Memory
4 - DRAM
Y - Product : XDR RAM
50 - Density : 512M, 32K/16ms(0,49us)
16 - Organisation : x16
4 - Banks : 8
U - Interface : DRSL(1.8V, 1.2V)
E - Generation : 6th
-
J - Packagetype: BOC lead free
C - Temperature & Power: Commercial, Normal Power
B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles


Elpida X5116ADSE-3C-E

104-ball FBGA
Elpida X5116ADSE-3C-E

Datasheet: Elpida X5116ADSE-3C-E 

productcode meaning:
X - Product Family : XDR RAM
51 - Density : 512M (x16bit)
16 - Organisation : x16bit
A - Supply Voltage : 1.8V, DRSL
D - Die Revision: D
SE - Package : FBGA (with back cover)
-
3C - Speed : 3.2G (tRAC = 35, C Bin)
-
E - Environmental Code : Lead Free


Elpida X1032BASE-3C-F

Datasheet: E1332E50 (EOL) 

productcode meaning:
E - Elpida Memory
D - Type : Monolithic Device
X - Product Family : XDR RAM
13 - Density : 1Gbit (128MB) 32Mbitx32 
32 - Organisation : x32bit
B - Supply Voltage : 1.5V +/- 0.075V, DRSL
A - Die Revision: A
SE - Package : FBGA (with back cover)
-
3C - Speed : 3.2G (tRAC = 35, C Bin)
-
F - Environmental Code : Lead & Halogen Free


Graphics Memory

FBGA-136 / on-die
Samsung K4J52324QC-SC14
RSX bare die
GPU in centre
4x GDDR3

Datasheet: Samsung K4J52324QC-SC14 

productcode meaning:
K - Samsung Memory
4 - DRAM
J - Product : GDDR3 RAM
52 - Density : 512M, 32ms, 8K
32 - Organisation : x32
4 - Banks : 8
Q - Interface : DRSL(1.8V, 1.2V)
C - Generation : 4th
-
S - Packagetype: BOC lead
C - Temperature & Power: Commercial, Normal Power (1.8V +/- 0.1V)
14 - Speed (Data frequency, tRAC, tRC) : 1.4Gbps


The 256MB of GDDR3 memory is located inside the RSX chip using four 64MB Samsung chips.


Type Size Speed Voltage Packaging Manufacturer Serial Number Description
GDDR3 64MB 700MHz 2.0V +/-0.1V FBGA-136 on-die Samsung K4J52324QC-SC14 256MB total (4 chips) for PS3 Graphics Memory


PS2 Compatibility Memory

54-ball FBGA
Samsung K4R271669F

Datasheet: Samsung K4R271669F

The earlier models with hardware PS2 compatibility also contained an extra 32MB of RDRAM using two 16MB Samsung chips.

Type Size Speed Voltage Packaging Manufacturer Serial Number Description
RDRAM 16MB 800MHz 2.50 +/- 0.13V 54-pin Samsung K4R271669F 32MB total (2 chips) for Hardware PS2 Compatibility System Memory


source: http://www.edepot.com/playstation3.html#PS3_Motherboard

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