K4Y50164UE-JCB3: Difference between revisions

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(found these chips in use on a PAL CECH-2003A slim)
m (specs replaced by a template)
 
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Datasheet: [http://www.samsung.com/global/system/business/semiconductor/product/2007/6/11/XDR_RDRAM/XDRDRAM/Component/512Mbit/K4Y50164UE/ds_k4y50xx4ue_rev10.pdf Samsung K4Y50164UE-JCB3]
Datasheet: [http://www.samsung.com/global/system/business/semiconductor/product/2007/6/11/XDR_RDRAM/XDRDRAM/Component/512Mbit/K4Y50164UE/ds_k4y50xx4ue_rev10.pdf Samsung K4Y50164UE-JCB3]


<pre>productcode meaning:
{{Samsung memory product code}}
K - Samsung Memory
4 - DRAM
Y - Product : XDR RAM
50 - Density : 512M, 32K/16ms(0,49us)
16 - Organisation : x16
4 - Banks : 8
U - Interface : DRSL(1.8V, 1.2V)
E - Generation : 6th
-
J - Packagetype: BOC lead free
C - Temperature & Power: Commercial, Normal Power
B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles</pre>


{{Wikify}}
{{Wikify}}

Latest revision as of 10:45, 14 April 2021

Samsung K4Y50164UE-JCB3[edit | edit source]

100-ball FBGA
Samsung K4Y50164UE-JCB3

(CECHGxx/SEM-001, CECHJxx/DIA-002, CECHKxx/DIA-002, CECH-20xx/DYN-001)

Datasheet: Samsung K4Y50164UE-JCB3

Samsung memory product code
Manufacturer DRAM DRAM type Density Organization Banks Interface Revision Package type Power & Temp. Speed
K: Samsung 4: DRAM J: GDDR3 SDRAM
Y: XDR DRAM
G: GDDR5 SDRAM
10: 1G, 8K/32ms
50: 512M, 32K/16ms
52: 512M, 8K/32ms
12: ?
16: x16bit
32: x32bit
4: 8 Banks
5: 16 Banks
U: DRSL, 1.8V, 1.2V
Q: SSTL-2 1.8V, 1.8V
K: ?
T: ?
F: POD_15(1.5V,1.5V)
C: 4th Gen.
E: 6th Gen.
G: 8th Gen.
I: 10th Gen.
J: 11th Gen.
J: BOC (Lead-free)
S: ?
K: ?
H (GDDR5): FBGA-170
C: Normal Power (0ºC–95ºC) B3 (XDR): 3.2Gbps, 35ns, 20Cycles
14 (GDDR3): 1.4ns (700MHz)
15 (GDDR5): 1.5ns (667MHz)