Template:Samsung memory product code: Difference between revisions

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| '''50''': 512M, 32K/16ms<br />'''52''': 512M, 8K/32ms<br />'''12''': ?
| '''50''': 512M, 32K/16ms<br />'''52''': 512M, 8K/32ms<br />'''12''': ?
| '''16''': x16bit<br />'''32''': x32bit
| '''16''': x16bit<br />'''32''': x32bit
| '''4''': 8 Banks
| '''4''': 8 Banks<br />'''5''': 16 Banks
| '''U''': DRSL, 1.8V, 1.2V<br>'''Q''': SSTL-2 1.8V, 1.8V<br>'''K''': ?<br>'''T''': ?
| '''U''': DRSL, 1.8V, 1.2V<br>'''Q''': SSTL-2 1.8V, 1.8V<br>'''K''': ?<br>'''T''': ?
| '''C''': 4th Gen.<br />'''E''': 6th Gen.<br />'''I''': 10th Gen.<br />'''J''': 11th Gen.
| '''C''': 4th Gen.<br />'''E''': 6th Gen.<br />'''I''': 10th Gen.<br />'''J''': 11th Gen.

Revision as of 13:59, 11 February 2023

Samsung memory product code
Manufacturer DRAM DRAM type Density Organization Banks Interface Revision Package type Power & Temp. Speed
K: Samsung 4: DRAM J: GDDR3 SDRAM
Y: XDR DRAM
G: GDDR5 SDRAM
50: 512M, 32K/16ms
52: 512M, 8K/32ms
12: ?
16: x16bit
32: x32bit
4: 8 Banks
5: 16 Banks
U: DRSL, 1.8V, 1.2V
Q: SSTL-2 1.8V, 1.8V
K: ?
T: ?
C: 4th Gen.
E: 6th Gen.
I: 10th Gen.
J: 11th Gen.
J: BOC (Lead-free)
S: ?
K: ?
C: Normal Power (0ºC–95ºC) B3 (XDR): 3.2Gbps, 35ns, 20Cycles
14 (GDDR3): 1.4ns (700MHz)
15 (GDDR5): 1.5ns (667MHz)