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(Created page with "== Main System Memory == The PS3 has 256MB of 64 bit bus Rambus XDR main system memory. Some models use four 64MB Samsung chips, while other models uses four 64MB Elpida chips. ...") |
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=== Samsung K4Y50164UC-JCB3 === | === Samsung K4Y50164UC-JCB3 === | ||
(CECHG,CECHK) | |||
<div style="float:right">[[File:K4Y50164UC-JCB3.png|200px|thumb|left|100-ball FBGA<br />Samsung K4Y50164UC-JCB3]]</div> | <div style="float:right">[[File:K4Y50164UC-JCB3.png|200px|thumb|left|100-ball FBGA<br />Samsung K4Y50164UC-JCB3]]</div> | ||
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C - Temperature & Power: Commercial, Normal Power | C - Temperature & Power: Commercial, Normal Power | ||
B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles</pre> | B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles</pre> | ||
=== Samsung K4Y50164UE-JCB3 === | === Samsung K4Y50164UE-JCB3 === | ||
Revision as of 11:39, 2 June 2011
Main System Memory
The PS3 has 256MB of 64 bit bus Rambus XDR main system memory. Some models use four 64MB Samsung chips, while other models uses four 64MB Elpida chips.
A sample of the Memory chips in different PS3 models:
| Type | Size | Speed | Voltage | Packaging | Manufacturer | Serial Number | Description |
|---|---|---|---|---|---|---|---|
| Rambus XDR | 64MB | 400MHz | 1.8V+/-0.09V | FBGA-104 | Elpida | EDX5116ACSE-3C-E | 256MB total (4 chips) for PS3 System Memory (Initial Models) |
| Rambus XDR | 64MB | 400MHz | 1.8V+/-0.09V | FBGA-104 | Samsung | K4Y50164UC-JCB3 | 256MB total (4 chips) for PS3 System Memory (Initial Models) |
| Rambus XDR | 64MB | 400MHz | 1.8V+/-0.09V | FBGA-100 | Samsung | K4Y50164UE-JCB3 | 256MB total (4 chips) for PS3 System Memory (CECHG,CECHK) |
| Rambus XDR | 64MB | 400MHz | 1.8V+/-0.09V | FBGA-104 | Elpida | X5116ADSE-3C-E | 256MB total (4 chips) for PS3 System Memory (CECH-20xx) |
| Rambus XDR | 128MB | 400MHz | 1.5V+/-0.075V | FBGA-150 | Elpida | X1032BASE-3C-F | 256MB total (2 chips) for PS3 System Memory (CECH-21xx and later) |
Elpida EDX5116ACSE-3C-E
Datasheet: Elpida EDX5116ACSE
productcode meaning: E - Elpida Memory D - Type : Monolithic Device X - Product Family : XDR RAM 51 - Density : 512M (x16bit) 16 - Organisation : x16bit A - Supply Voltage : 1.8V, DRSL C - Die Revision: C SE - Package : FBGA (with back cover) - 3C - Speed : 3.2G (tRAC = 35, C Bin) - E - Environmental Code : Lead Free
Samsung K4Y50164UC-JCB3
(CECHG,CECHK)
Datasheet: Samsung K4Y50164UC-JCB3
productcode meaning: K - Samsung Memory 4 - DRAM Y - Product : XDR RAM 50 - Density : 512M, 32K/16ms(0,49us) 16 - Organisation : x16 4 - Banks : 8 U - Interface : DRSL(1.8V, 1.2V) C - Generation : 4th - J - Packagetype: BOC lead free C - Temperature & Power: Commercial, Normal Power B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles
Samsung K4Y50164UE-JCB3
Datasheet: Samsung K4Y50164UE-JCB3
productcode meaning: K - Samsung Memory 4 - DRAM Y - Product : XDR RAM 50 - Density : 512M, 32K/16ms(0,49us) 16 - Organisation : x16 4 - Banks : 8 U - Interface : DRSL(1.8V, 1.2V) E - Generation : 6th - J - Packagetype: BOC lead free C - Temperature & Power: Commercial, Normal Power B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles
Elpida X5116ADSE-3C-E
Datasheet: Elpida X5116ADSE-3C-E
productcode meaning: X - Product Family : XDR RAM 51 - Density : 512M (x16bit) 16 - Organisation : x16bit A - Supply Voltage : 1.8V, DRSL D - Die Revision: D SE - Package : FBGA (with back cover) - 3C - Speed : 3.2G (tRAC = 35, C Bin) - E - Environmental Code : Lead Free
Elpida X1032BASE-3C-F
Datasheet: E1332E50 (EOL)
productcode meaning: E - Elpida Memory D - Type : Monolithic Device X - Product Family : XDR RAM 13 - Density : 1Gbit (128MB) 32Mbitx32 32 - Organisation : x32bit B - Supply Voltage : 1.5V +/- 0.075V, DRSL A - Die Revision: A SE - Package : FBGA (with back cover) - 3C - Speed : 3.2G (tRAC = 35, C Bin) - F - Environmental Code : Lead & Halogen Free
Graphics Memory
Samsung K4J52324QC-SC14
Datasheet: Samsung K4J52324QC-SC14
productcode meaning: K - Samsung Memory 4 - DRAM J - Product : GDDR3 RAM 52 - Density : 512M, 32ms, 8K 32 - Organisation : x32 4 - Banks : 8 Q - Interface : DRSL(1.8V, 1.2V) C - Generation : 4th - S - Packagetype: BOC lead C - Temperature & Power: Commercial, Normal Power (1.8V +/- 0.1V) 14 - Speed (Data frequency, tRAC, tRC) : 1.4Gbps
The 256MB of GDDR3 memory is located inside the RSX chip using four 64MB Samsung chips.
| Type | Size | Speed | Voltage | Packaging | Manufacturer | Serial Number | Description |
|---|---|---|---|---|---|---|---|
| GDDR3 | 64MB | 700MHz | 2.0V +/-0.1V | Samsung | K4J52324QC-SC14 | 256MB total (4 chips) for PS3 Graphics Memory |
PS2 Compatibility Memory
Samsung K4R271669F
Datasheet: Samsung K4R271669F
The earlier models with hardware PS2 compatibility also contained an extra 32MB of RDRAM using two 16MB Samsung chips.
| Type | Size | Speed | Voltage | Packaging | Manufacturer | Serial Number | Description |
|---|---|---|---|---|---|---|---|
| RDRAM | 16MB | 800MHz | 2.50 +/- 0.13V | 54-pin | Samsung | K4R271669F | 32MB total (2 chips) for Hardware PS2 Compatibility System Memory |