Talk:Flash (Hardware): Difference between revisions
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= flash specifications = | |||
== NOR == | |||
{| class="wikitable sortable" | |||
|- | |||
! Flash !! write<br />buffer !! access<br />time !! page<br />read !! read<br />bus<br />cycles !! write<br />bus<br />cycles !! erase<br />bus<br />cycles !! typ.<br />erase<br />time !! typ.<br />program<br />time | |||
|- | |||
| [http://www.sltdigital.com/product/product_pdf/sencond_hdx_ic/memory/S29GL256.pdf S29GL128N] || 16 words/<br />32 bytes || 90ns || 25ns || 1 || 6 || 6 || 64s<br />(0.5s/sector) || 123s | |||
|- | |||
| [http://www.spansion.com/Support/Datasheets/S29GL-P_00.pdf S29GL128P] || 32 words/<br />64 bytes || 90ns || 25ns || 1 || 6 || 6 || 64s<br />(0.5s/sector) || 123s | |||
|- | |||
| [http://www.samsung.com/global/system/business/semiconductor/product/2007/8/7/144546ds_k8q2815uqb_rev11.pdf K8Q2815UQB] || ... || 60ns || 20ns || 1 || 4 || 6 || 71s/chip<br />(0.7s/sector) || 25.2s/chip | |||
|- | |||
| [http://www.samsung.com/global/system/business/semiconductor/product/2010/11/26/478704ds_k8p2716uzc_rev10.pdf K8P2716UZC] || 32 words/<br />64 bytes || 65ns || 25ns || 1 || 6 || 6 || 89.6s<br />(0.7s/sector) || 26s | |||
|- | |||
| [http://www.mxic.com.tw/QuickPlace/hq/PageLibrary4825740B00298A3B.nsf/h_Index/DBACA1C90564EBB248257639003A563A/$File/MX29GL128E,%203V,%20128Mb,%20v1.1.pdf MX29GL128E] || 32 words/<br />64 bytes || 90ns || 25ns || 1 || 6 || 6 || 64s<br />(0.6s/sector) || 50s | |||
|- | |||
|} | |||
= shops = | = shops = | ||
Buying spare NAND/NOR parts: | Buying spare NAND/NOR parts: | ||
Revision as of 00:53, 3 March 2012
flash specifications
NOR
| Flash | write buffer |
access time |
page read |
read bus cycles |
write bus cycles |
erase bus cycles |
typ. erase time |
typ. program time |
|---|---|---|---|---|---|---|---|---|
| S29GL128N | 16 words/ 32 bytes |
90ns | 25ns | 1 | 6 | 6 | 64s (0.5s/sector) |
123s |
| S29GL128P | 32 words/ 64 bytes |
90ns | 25ns | 1 | 6 | 6 | 64s (0.5s/sector) |
123s |
| K8Q2815UQB | ... | 60ns | 20ns | 1 | 4 | 6 | 71s/chip (0.7s/sector) |
25.2s/chip |
| K8P2716UZC | 32 words/ 64 bytes |
65ns | 25ns | 1 | 6 | 6 | 89.6s (0.7s/sector) |
26s |
| MX29GL128E | 32 words/ 64 bytes |
90ns | 25ns | 1 | 6 | 6 | 64s (0.6s/sector) |
50s |
shops
Buying spare NAND/NOR parts:
PSP flash
ref. : http://hitmen.c02.at/files/yapspd/psp_doc/chap3.html
FAT
TA-079 - Samsung K5E5658HCM-D060 (3.0V/2.5V) TA-080 - TA-081 - TA-082 - Samsung K5E5658ACM-D060 (1.8V/1.8V) TA-086 -
Slim
TA-085 - Sharp LR388A1 TA-088 - Sharp LR388A0 - PSP-2000
Brite
TA-090 -
Go
TA-091 - TA-094 -
X360
- Samsung K9F4G08U0M-K9F4G08U0A-K9F4G08U0B-K9F4G08U0C-K9F4G08U0D-K9F4G08U0E-K9F4G08U0Y-K9F4G08U0Z.pdf (1.05 MB) (not used in PS3, was asked in EF.net #progskeet-support (Xbox360 Jasper)
- Hynix h27ubg8t2atr (used in new glitchproof xbox 360 mobo)
H - Hynix 2 - Flash 7 - NAND u - 2.7V~3.6V VCC bg - 32Gb 8 - x8 organisation t - MLC + single die + large block 2 - 1nCE & 1 R/nB; Sequential Row Read Disable a - 2nd generation t - TSOP1 r - Lead & Halogen free
Datasheet: AAFDEd01.pdf (1.58 MB)
product serial breakdown
Macronix
Serial Flash
Device
25L: 3V, Serial Flash 25U: 1.8V, Serial Flash 25V: 2.5V, Serial Flash
Density
10: 1Mb 20: 2Mb 40: 4Mb 80: 8Mb 16: 16Mb 32: 32Mb 64: 64 Mb 128: 128Mb 256/257: 256Mb
Mode
05: Standard single I/O 06: Single in, Dual out 08: Unique ID 25/26: Default lock protection 33/35: MXSMIO - Multi in, Multi out 36: MXSMIO - Single in, Multi out 45: MXSMIO Duplex - Multi I/O with DTR 55: MXSMIO - Security type
Generation
Package Type
P: 300mil 8-PDIP ZN: 8-WSON (6x5mm) Z2: 8-WSON (8x6mm) ZU: 8-USON M: SOP O: 173mil 8-TSSOP XC: 24-ball TFBGA
Temperature Range
I: Industrial (-40'C to 85'C) S: Automotive Grade 3 (-40'C to 85'C) R: Automotive Grade 2 (-40'C to 105'C) Q: Automotive Grade 1 (-40'C to 125'C)
Speed
10: 104MHz 12: 85MHz/86MHz 13: 75MHz 15: 66MHz 20: 50MHz 25: 40MHz
Option
G: RoHS Compliant
Parallel Flash
Device
29F: 5V, Parallel Flash 29LV / 29GL / 68GL: 3V, Parallel Flash 29LA / 29GA: Security Type, Parallel Flash
Density
20x: 2Mb 40x: 4Mb 80x: 8Mb 16x: 16Mb 32x: 32Mb 64x: 64 Mb 12x: 128Mb 25x: 256Mb 51x: 512Mb
Generation
Block Type
T: Top Boot B: Bottom Boot H: Uniform Sector, Highest Address Sector Protected L: Uniform Sector, Lowest Address Sector Protected U: VI/O=1.65 to VCC, VCC=2.7 to 3.6V, Highest Address Sector Protected D: VI/O=1.65 to VCC, VCC=2.7 to 3.6V, Lowest Address Sector Protected
Package Type
P: 8-PDIP M: SOP Q: PLCC T/T2: TSOP XB: 0.8mm Ball Pitch / 0.3mm Ball Size XC: 1.0mm Ball Pitch / 0.4mm Ball Size XE: 0.8mm Ball Pitch / 0.4mm Ball Size XF: 1.0mm Ball Pitch / 0.6mm Ball Size XH: 0.5mm Ball Pitch / 0.3mm Ball Size GB: 0.5mm Ball Pitch / 0.25mm Ball Size XG: 0.8mm Ball Pitch / 0.4mm Ball Size
Temperature Range
C: Commercial (-0'C to 70'C) I: Industrial (-40'C to 85'C) S: Automotive Grade 3 (-40'C to 85'C) R: Automotive Grade 2 (-40'C to 105'C) Q: Automotive Grade 1 (-40'C to 125'C)
Speed
55: 55ns 70: 70ns 90: 90ns 10: 100ns 11: 110ns
Option
G: RoHS Compliant Q: Restricted VCC: (3.0V-3.6V) RoHS Compliant
NAND Flash
Device
30: NAND Flash
Voltage
L: 2.7V to 3.6V
Classification
F: SLC+Large Block
Density
12: 512Mb 1G: 1Gb
Option Code
08=x8
Mode
A-Die#:1, CE#:1, R/B#:1, Reserve:0
Generation
Package Type
T: 48TSOP XK: 0.8mm Ball Pitch / 0.45mm Ball Size of VFBGA RoHS Compliant
Temperature Range
I: Industrial (-40'C to 85'C)