Flash (Hardware): Difference between revisions
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[[Category:Hardware]] | |||
= Differentiation = | = Differentiation = | ||
Revision as of 02:50, 8 July 2011
Differentiation
CECHA-CECHG (Fat-old) : 2x Samsung K9F1G08U0A-PIB0 (2x1Gbit=256MB total)
CECHH-CECHQ (Fat-new) and CECH-2xxxA/B (Slim): 1x Spansion S29GL128N90TFIR2 or 1x Samsung K8Q2815UQB-PI4B
For a difference between models, see SKU Models
Samsung K9F1G08U0A-PIB0
productcode meaning: K - Memory 9 - NAND Flash F - Small Classification : SLC Normal 1G - Density : 1Gigabit (128MB) 0 - Technology : Normal (x8) 8 - Organisation : x8 U - Vcc Supply Voltage : min 2.7V - Max 3.6V / typ. 3.3V 0 - Mode : Normal A - Generation : 2nd - P - Package : 48pin TSOP1 (12mm x 20mm / 0.5mm pitch)) Lead-free I - Temperature : Industrial B - Customer Bad Block : Include Bad Block 0 - PreProgram Version : None
Pin | Usage | Remarks |
---|---|---|
1 | NC | No Connection |
2 | NC | No Connection |
3 | NC | No Connection |
4 | NC | No Connection |
5 | NC | No Connection |
6 | NC | No Connection |
7 | R/B | Read/Busy Output |
8 | RE | Read Enable |
9 | CE | Chip Enable |
10 | NC | No Connection |
11 | NC | No Connection |
12 | Vcc | Vcc (min 2.7V-max 3.6V / typ 3.3V) |
13 | Vss | Ground |
14 | NC | No Connection |
15 | NC | No Connection |
16 | CLE | Command Latch Enable |
17 | ALE | Address Latch Enable |
18 | WE | Write Enable |
19 | WP | Write Protect |
20 | NC | No Connection |
21 | NC | No Connection |
22 | NC | No Connection |
23 | NC | No Connection |
24 | NC | No Connection |
Pin | Usage | Remarks |
---|---|---|
25 | NC | No Connection |
26 | NC | No Connection |
27 | NC | No Connection |
28 | NC | No Connection |
29 | I/O0 | |
30 | I/O1 | |
31 | I/O2 | |
32 | I/O3 | |
33 | NC | No Connection |
34 | NC | No Connection |
35 | NC | No Connection |
36 | Vss | Ground |
37 | Vcc | Vcc (min 2.7V-max 3.6V / typ 3.3V) |
38 | NC | No Connection |
39 | NC | No Connection |
40 | NC | No Connection |
41 | I/O4 | |
42 | I/O5 | |
43 | I/O6 | |
44 | I/O7 | |
45 | NC | No Connection |
46 | NC | No Connection |
47 | NC | No Connection |
48 | NC | No Connection |
Spansion S29GL128N90TFIR2
productcode meaning: S29GL128N - 3.0 Volt-only, 512 Megabit (32M x 16-bit/64Mx8-bit), Page-Mode, Flash Memory, 110nm 90 - Speed option : 90ns T - Package type: TSOP F - Package materials set : Lead-free I - Temperature range : Industrial R2 - ?Vio = 2.7 to 3.6V, lowest address sector protected?
Pin | Usage | Remarks |
---|---|---|
1 | A23 | No Connection for S29GL128N |
2 | A22 | |
3 | A15 | |
4 | A14 | |
5 | A13 | |
6 | A12 | |
7 | A11 | |
8 | A10 | |
9 | A9 | |
10 | A8 | |
11 | A19 | |
12 | A20 | |
13 | WE# | Write Enable |
14 | RESET# | Reset |
15 | A21 | |
16 | WP#/ACC | Write Protect / Accelerated Program Operation |
17 | RD/BY# | Ready/Busy Output |
18 | A18 | |
19 | A17 | |
20 | A7 | |
21 | A6 | |
22 | A5 | |
23 | A4 | |
24 | A3 | |
25 | A2 | |
26 | A1 | |
27 | NC | No Connection |
28 | NC | No Connection |
Pin | Usage | Remarks |
---|---|---|
29 | Vio | Vio - Output Buffer Power |
30 | NC | No Connection |
31 | A0 | |
32 | CE# | Chip Enable |
33 | VSS | Ground |
34 | OE# | Output Enable |
35 | DQ0 | |
36 | DQ8 | |
37 | DQ1 | |
38 | DQ9 | |
39 | DQ2 | |
40 | DQ10 | |
41 | DQ3 | |
42 | DQ11 | |
43 | Vcc | Vcc (min 2.7V-max 3.6V / typ 3.0V) |
44 | DQ4 | |
45 | DQ12 | |
46 | DQ5 | |
47 | DQ13 | |
48 | DQ6 | *OTP? |
49 | DQ14 | |
50 | DQ7 | *OTP? |
51 | DQ15/A-1 | |
52 | VSS | Ground |
53 | #BYTE | BYTE# Selects 8-bit or 16-bit mode (NC on Samsung NOR) |
54 | A16 | |
55 | NC | No Connection |
56 | A24 | No Connection for S29GL128N and S29GL256N |
Samsung K8Q2815UQB-PI4B
productcode meaning: K - Memory 8 - NOR Flash Q - Small Classification : Page Mode DDP 28 - Density : 128M, 8M / 16Bank / 8^8 15 - Dual Bank Boot Block (Bank1, Bank2) : 16M, 2M / 14M U - Vcc : 3.0V / 3.3V (2.7V~3.6V) Q - Device Type: Yop and Bottom Boot Block B - Generation : 3rd Generation - P - Package : TSOP1 (Lead Free) I - Temp : Industrial 4B - Speed : 60ns/25ns (Page)
Pin | Usage | Remarks |
---|---|---|
1 | NC | No Connection |
2 | A22 | |
3 | A15 | |
4 | A14 | |
5 | A13 | |
6 | A12 | |
7 | A11 | |
8 | A10 | |
9 | A9 | |
10 | A8 | |
11 | A19 | |
12 | A20 | |
13 | WE | Write Enable |
14 | RESET | Reset |
15 | A21 | |
16 | WP/ACC | Write Protect / Accelerated Program Operation |
17 | RD/BY | Ready/Busy Output |
18 | A18 | |
19 | A17 | |
20 | A7 | |
21 | A6 | |
22 | A5 | |
23 | A4 | |
24 | A3 | |
25 | A2 | |
26 | A1 | |
27 | NC | No Connection |
28 | NC | No Connection |
Pin | Usage | Remarks |
---|---|---|
29 | VCCQ | VccQ |
30 | NC | No Connection |
31 | A0 | |
32 | CE | Chip Enable |
33 | VSS | Ground |
34 | OE | Output Enable |
35 | DQ0 | |
36 | DQ8 | |
37 | DQ1 | |
38 | DQ9 | |
39 | DQ2 | |
40 | DQ10 | |
41 | DQ3 | |
42 | DQ11 | |
43 | Vcc | Vcc (min 2.7V-max 3.6V / typ 3.0V) |
44 | DQ4 | |
45 | DQ12 | |
46 | DQ5 | |
47 | DQ13 | |
48 | DQ6 | *OTP? |
49 | DQ14 | |
50 | DQ7 | *OTP? |
51 | DQ15 | |
52 | VSS | Ground |
53 | NC | No Connection |
54 | A16 | |
55 | NC | No Connection |
56 | NC | No Connection |
- OTP Block Region : 256-word Flash memory region. The data DQ6=1 for customer locked and DQ7=1 for factory locked
Other
Renesas HN58X2504TIE
productcode meaning: H - N - 5 - 8 - Organisation : x8bit X - 2 - 5 - 0 - 4 - Density : 4-kbit (512x8bit) T - Package : 8pin plastic TSSOP (TTP-8DAV) I - Temp : Industrial (-40 to +85 °C E - Environment : Lead Free
Each PS3 has a special EEPROM chip on the motherboard using a SPI Serial Interface Renasas chip.
Type | Size | Speed | Voltage | Packaging | Manufacturer | Serial Number | Description |
---|---|---|---|---|---|---|---|
EEPROM | 4-kbit (512x8bit) | 3MHz | 1.8V to 5.5V | 8-pin TSSOP | Renesas | HN58X2504TIE | PS3 EEPROM chip |
Pin | Usage | Remarks |
---|---|---|
1 | S | Chip Select |
2 | Q | Serial data output |
3 | W | Write Protect |
4 | VSS | Ground |
5 | D | Serial data input |
6 | C | Serial Clock |
7 | HOLD | Hold |
8 | VCC | Vcc (min 1.8V-max 5.5V) |